vuv4 mppcs Search Results


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Hamamatsu vuv4 multi-pixel photon counter (mppc
Summary of the SiPM specification whose secondary photon emission is studied in this work [ <xref ref-type= 2 , 6 ]. The Fill Factor is defined as the ratio between the photon-sensitive area to the total area of the SiPM. The breakdown voltages are extracted from the SiPM I-V curves; defined as the voltage for which the first derivative with respect to the voltage of the SiPM current (in log space) is at the maximum [ 23 ]." width="250" height="auto" />
Vuv4 Multi Pixel Photon Counter (Mppc, supplied by Hamamatsu, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
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vuv4 multi-pixel photon counter (mppc - by Bioz Stars, 2026-10
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Summary of the SiPM specification whose secondary photon emission is studied in this work [ <xref ref-type= 2 , 6 ]. The Fill Factor is defined as the ratio between the photon-sensitive area to the total area of the SiPM. The breakdown voltages are extracted from the SiPM I-V curves; defined as the voltage for which the first derivative with respect to the voltage of the SiPM current (in log space) is at the maximum [ 23 ]." width="100%" height="100%">

Journal: Sensors (Basel, Switzerland)

Article Title: Characterisation of SiPM Photon Emission in the Dark

doi: 10.3390/s21175947

Figure Lengend Snippet: Summary of the SiPM specification whose secondary photon emission is studied in this work [ 2 , 6 ]. The Fill Factor is defined as the ratio between the photon-sensitive area to the total area of the SiPM. The breakdown voltages are extracted from the SiPM I-V curves; defined as the voltage for which the first derivative with respect to the voltage of the SiPM current (in log space) is at the maximum [ 23 ].

Article Snippet: For this publication, we focused on two SiPMs, considered as photo-sensor candidates for the nEXO experiment: one Fondazione Bruno Kessler (FBK) VUVHD Low Field (LF) Low After Pulse (Low AP) SiPM (VUV-HD3) and one Hamamatsu Photonics (HPK) VUV4 Multi-Pixel Photon Counter (MPPC).

Techniques:

Top row: Emission microscopy image (EMMI) of the HPK VUV4 biased at 11.2 ± 1.0 V of over voltage. Bottom row: EMMI of FBK VUV-HD3 biased at 13 ± 1 V of over voltage. Both EMMIs were taken with the same camera exposure time and objective lens: LMPLFLN20X (20× magnification).

Journal: Sensors (Basel, Switzerland)

Article Title: Characterisation of SiPM Photon Emission in the Dark

doi: 10.3390/s21175947

Figure Lengend Snippet: Top row: Emission microscopy image (EMMI) of the HPK VUV4 biased at 11.2 ± 1.0 V of over voltage. Bottom row: EMMI of FBK VUV-HD3 biased at 13 ± 1 V of over voltage. Both EMMIs were taken with the same camera exposure time and objective lens: LMPLFLN20X (20× magnification).

Article Snippet: For this publication, we focused on two SiPMs, considered as photo-sensor candidates for the nEXO experiment: one Fondazione Bruno Kessler (FBK) VUVHD Low Field (LF) Low After Pulse (Low AP) SiPM (VUV-HD3) and one Hamamatsu Photonics (HPK) VUV4 Multi-Pixel Photon Counter (MPPC).

Techniques: Microscopy

Composite EMMI of the HPK VUV4 and FBK VUV-HD3 SiPMs at 4× magnification and V ov = 11.0 V and 13.0 V (±1.0 V), respectively. The regions enclosed in the white boxes are the areas where we zoomed to 20× magnification for spectral measurements. Both EMMI were taken with the same camera exposure time and objective lens: PLCN4X-1-7.

Journal: Sensors (Basel, Switzerland)

Article Title: Characterisation of SiPM Photon Emission in the Dark

doi: 10.3390/s21175947

Figure Lengend Snippet: Composite EMMI of the HPK VUV4 and FBK VUV-HD3 SiPMs at 4× magnification and V ov = 11.0 V and 13.0 V (±1.0 V), respectively. The regions enclosed in the white boxes are the areas where we zoomed to 20× magnification for spectral measurements. Both EMMI were taken with the same camera exposure time and objective lens: PLCN4X-1-7.

Article Snippet: For this publication, we focused on two SiPMs, considered as photo-sensor candidates for the nEXO experiment: one Fondazione Bruno Kessler (FBK) VUVHD Low Field (LF) Low After Pulse (Low AP) SiPM (VUV-HD3) and one Hamamatsu Photonics (HPK) VUV4 Multi-Pixel Photon Counter (MPPC).

Techniques:

Summary of the exposure time ( t ET ), over-voltage V ov , total charge Q ET (as defined by Equation ( <xref ref-type= 2 )) and average current 〈 i ( t ) 〉 during SiPM spectral measurements." width="100%" height="100%">

Journal: Sensors (Basel, Switzerland)

Article Title: Characterisation of SiPM Photon Emission in the Dark

doi: 10.3390/s21175947

Figure Lengend Snippet: Summary of the exposure time ( t ET ), over-voltage V ov , total charge Q ET (as defined by Equation ( 2 )) and average current 〈 i ( t ) 〉 during SiPM spectral measurements.

Article Snippet: For this publication, we focused on two SiPMs, considered as photo-sensor candidates for the nEXO experiment: one Fondazione Bruno Kessler (FBK) VUVHD Low Field (LF) Low After Pulse (Low AP) SiPM (VUV-HD3) and one Hamamatsu Photonics (HPK) VUV4 Multi-Pixel Photon Counter (MPPC).

Techniques:

Pictorial representation of how the quantity ρ surf is calculated for the HPK VUV4 MPPC (top) and FBK VUV-HD3 (bottom) SiPM combining the information of and . R k , with k = { 1 , 2 , 3 } are selected regions where the photon count is measured. See text for more details.

Journal: Sensors (Basel, Switzerland)

Article Title: Characterisation of SiPM Photon Emission in the Dark

doi: 10.3390/s21175947

Figure Lengend Snippet: Pictorial representation of how the quantity ρ surf is calculated for the HPK VUV4 MPPC (top) and FBK VUV-HD3 (bottom) SiPM combining the information of and . R k , with k = { 1 , 2 , 3 } are selected regions where the photon count is measured. See text for more details.

Article Snippet: For this publication, we focused on two SiPMs, considered as photo-sensor candidates for the nEXO experiment: one Fondazione Bruno Kessler (FBK) VUVHD Low Field (LF) Low After Pulse (Low AP) SiPM (VUV-HD3) and one Hamamatsu Photonics (HPK) VUV4 Multi-Pixel Photon Counter (MPPC).

Techniques:

Values of ρ surf for the FBK VUV-HD3 and  HPK   VUV4  SiPMs.

Journal: Sensors (Basel, Switzerland)

Article Title: Characterisation of SiPM Photon Emission in the Dark

doi: 10.3390/s21175947

Figure Lengend Snippet: Values of ρ surf for the FBK VUV-HD3 and HPK VUV4 SiPMs.

Article Snippet: For this publication, we focused on two SiPMs, considered as photo-sensor candidates for the nEXO experiment: one Fondazione Bruno Kessler (FBK) VUVHD Low Field (LF) Low After Pulse (Low AP) SiPM (VUV-HD3) and one Hamamatsu Photonics (HPK) VUV4 Multi-Pixel Photon Counter (MPPC).

Techniques:

Spectra of the HPK VUV4 and FBK VUV-HD3 SiPMs as a function of the applied over-voltage.

Journal: Sensors (Basel, Switzerland)

Article Title: Characterisation of SiPM Photon Emission in the Dark

doi: 10.3390/s21175947

Figure Lengend Snippet: Spectra of the HPK VUV4 and FBK VUV-HD3 SiPMs as a function of the applied over-voltage.

Article Snippet: For this publication, we focused on two SiPMs, considered as photo-sensor candidates for the nEXO experiment: one Fondazione Bruno Kessler (FBK) VUVHD Low Field (LF) Low After Pulse (Low AP) SiPM (VUV-HD3) and one Hamamatsu Photonics (HPK) VUV4 Multi-Pixel Photon Counter (MPPC).

Techniques:

Photon yields (number of photons emitted per charge carrier) measured in the wavelength range [450–1020] nm for the FBK VUV-HD3 and  HPK   VUV4  SiPMs as a function of the applied over-voltage. The last line of the table represents the photon yields measured in [ <xref ref-type= 15 , 24 ], respectively." width="100%" height="100%">

Journal: Sensors (Basel, Switzerland)

Article Title: Characterisation of SiPM Photon Emission in the Dark

doi: 10.3390/s21175947

Figure Lengend Snippet: Photon yields (number of photons emitted per charge carrier) measured in the wavelength range [450–1020] nm for the FBK VUV-HD3 and HPK VUV4 SiPMs as a function of the applied over-voltage. The last line of the table represents the photon yields measured in [ 15 , 24 ], respectively.

Article Snippet: For this publication, we focused on two SiPMs, considered as photo-sensor candidates for the nEXO experiment: one Fondazione Bruno Kessler (FBK) VUVHD Low Field (LF) Low After Pulse (Low AP) SiPM (VUV-HD3) and one Hamamatsu Photonics (HPK) VUV4 Multi-Pixel Photon Counter (MPPC).

Techniques: